Objectifs du cours
Advanced High Resolution X-ray Diffraction methods are applied in strain, defect and deformation analysis on silicon single crystal (SiSC) based MEMS. Stresses and defects are introduced in the devices during the fabrication process (DRIE, annealing, bonding) and influence the crystalline perfection and therefore have a direct impact on the mechanical properties of MEMS. Stresses in the SiSC depend on the bonding process parameters such as voltage and temperature and also on the structuring procedure and the device release. The out-off plane diffraction techniques applied reveal information about the device stress state. The understanding of the device structure will result in an improved device design and fabrication.
Public cible
Engineers and researchers from industry and university
Contenu
- Introduction into the relation between physical and structural properties
- Introduction into high resolution X-Ray techniques
- Examples of successful technological transfer using X-Ray techniques
- structural properties,
- coherent and non coherent scattering
- high resolution X-Ray techniques
- stress
- coatings
Enseignant(s)
Dr Alex Dommann, Chief Technology Officer at CSEM SA, Neuchâtel, Switzerland.
Dr Antonia Neels, Head of XRD laboratory, CSEM SA, Neuchâtel, Switzerland.
2 days
CHF 1'200.00
EUR 1'000.00
Alex Dommann
Antonia Neels
